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In this work, we present the development of a Pt/graphene/SiC device for hydrogen gas sensing. A single layer of graphene was deposited on 6H-SiC via chemical vapor deposition. The presence of graphene C-C bonds was observed via X-ray photoelectron spectroscopy analysis. Current-voltage characteristics of the device were measured at the presence of hydrogen at different temperatures, from 25°C to...
We present an apertureless THz pulse near field microscopy (THz-NFM) system. Approach curves are obtained for Au films and float-zone Si wafers, and are analyzed by using self-consistent image method (SCIM).
With efforts to reduce the cost, size, and thermal management systems for the power electronics drivetrain in hybrid electric vehicles (HEVs) and plug-in hybrid electric vehicles (PHEVs), wide band gap semiconductors including silicon carbide (SiC) have been identified as possibly being a partial solution. Research on SiC power electronics has shown their higher efficiency compared to Si power electronics...
Nanoimprint lithography (NIL) is a novel technique that allows fabrication of submicron features into substrates using a modified embossing method into a polymer resist. In most cases, a stamp is produced by direct e-beam writing into a resist and then the pattern is etched into the substrate. Other stamp fabrication methods exist but, in general, they are expensive to produce. When performing NIL,...
We propose a self-consistent calculation method for apertureless THz near-field microscope (NFM) which is based on an exact image theory. Within the quasi-electrostatic limit, the exact image theory was iteratively applied to calculate interactions between dielectric spheres and substrate effects. The calculated near field was in excellent agreement with results from a commercial finite element method...
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