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TD-BPM simulation exhibits high modulation efficiency of 0.61 dB/µm in graphene optical modulators based on the semiconductor-metal transition. Evaluation of graphene chemical potential in graphene-gate-metal MOS capacitors demonstrates feasibility of device principle for 1.55-µm wavelength.
An aggressively scaled high-k last metal gate (HKMG) stack was successfully implemented for 20nm high performance and low power applications and even below. Key technologies include aggressive Tinv scaling down to 1.1nm with new HK, suppression of Vfb roll-off, metal layer control for Vt and its excellent uniformity, and metal gate stress engineering for performance improvement.
In conclusion, two decades ago Datta and Das proposed an experiment involving spin injection, detection, and spin precession caused by a gate voltage and special relativistic effects on ballistic electrons in a 2DES. We confirmed their predictions using an InAs SQW with a spin-orbit interaction so large that a gate voltage of a few volts can modulate the Rashba field by several Tesla. The importance...
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