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In this work we investigate the major scattering mechanisms leading to degradation of mobility in HfO2-gated, modulation doped, strained In0.53Ga0.47As/In0.77Ga0.23As QW structures were grown by molecular beam epitaxy on semi-insulating InP substrates. By varying In0.53Ga0.47As/InAlAs barrier and HfO2 thickness along with controlling interface state density and using temperature dependent Hall mobility...
Through a detailed evaluation of various dielectrics, we address the primary challenges associated with gate stacks on high electron mobility InGaAs channels. More specifically we address key gate stack issues including a) EOT scalability for high performance and electrostatic control (this work CET ~0.78 nm) with acceptable leakage both at operating and offstate for low power (this work Jg ~1 A/cm...
Charge trapping and wearout characteristics of self-aligned enhancement-mode GaAs nMOSFETs with silicon interface passivation layer and HfO2 gate oxide are systematically investigated at various time scales (from micro-seconds to seconds). Unlike high-kappa on silicon devices, both bulk trapping and interface trapping affect the PBTI (positive bias temperature instability) characteristics of nMOSFETs...
The authors demonstrate high-performing n-channel transistors with a HfO2/TaN gate stack and a low thermal-budget process using solid-phase epitaxial regrowth of the source and drain junctions. The thinnest devices have an equivalent oxide thickness (EOT) of 8 Aring, a leakage current of 1.5 A/cm2 at VG=1 V, a peak mobility of 190 cm2/Vmiddots, and a drive-current of 815 muA/mum at an off-state current...
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