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FinFET devices are explicitly mentioned in the ITRS roadmap and have a good potential for scaling CMOS to 22 nm and below. Some physical characterization and reliability aspects of these devices are reviewed. Attention is given to transient floating body effects and low frequency noise, which may yield information on the materials' characteristics like carrier recombination lifetime or interface and...
In this paper first results on the growth of thin layers of Al2O3, HfO2 and nanolaminates of them, by atomic layer deposition are reported. The electrical characterization of the deposited layers has been carried out by means of the analysis of the capacitance-voltage and current-voltage characteristics of aluminum-high-k dielectric-silicon capacitors. The obtained results show that for the same physical...
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