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In this work we report the results of a theoretical and experimental study on the lattice deformation induced by the deposition of a stoichiometric Si3N4 straining layer on silicon photonics coupling structures. Simulations of stress and strain distribution have been performed together with strain measurements on the nanofabricated structures employing convergent beam electron diffraction (CBED) technique...
This paper reports a theoretical and experimental study on induced strain in silicon-based rib structures. Simulations of induced stress and strain distribution were performed for nitride-strained silicon; moreover, locally-accurate strain measurements were performed on manufactured rib structures in proximity of the nitride-to-silicon interface employing the Convergent Beam Electron Diffraction (CBED)...
In this work the temperature dependent current-voltage characteristics of microwave annealed 4H-SiC vertical p+-i-n diodes are studied to identify some of the traps which affect the generation-recombination current of these diodes.
This paper presents an integrable optical network-on-chip based on multiple microrings, named multimicroring (MMR). The network consists of a central resonating microring with local microrings connected to the input/output ports. Multiple parallel communications can be supported through wavelength division multiplexing by properly tuning local microrings. The paper reports progress towards the realization...
This work reports a theoretical and experimental study on lattice deformation in silicon-rib structure induced by deposition of a stoichiometric silicon-nitride (Si3N4) layer. Simulations of stress and strain distributions in silicon rib were performed along with estimation of optical properties for structures on a silicon-on-insulator (SOI) platform; moreover, locally-accurate strain measurements...
This paper reports on the fabrication and characterization of high-resolution strain sensors for steel based on Silicon On Insulator flexural resonators manufactured with chip-level LPCVD vacuum packaging. The sensors present high sensitivity (120 Hz/με), very high resolution (4 nε), low drift, and near-perfect reversibility in bending tests performed in both tensile and compressive strain regimes.
A novel type of linear extensometer with exceptionally high resolution of 4 nm based on MEMS resonant strain sensors bonded on steel and operating in a vacuum package is presented. The tool is implemented by means of a steel thin bar that can be pre-stressed in tension within two fixing anchors. The extension of the bar is detected by using two vacuum-packaged resonant MEMS double- ended tuning fork...
A Micro-Opto-Mechanical-System (MOMS) based technology for the fabrication of Fabry-Perot interferometers on optical fiber is presented. Exploiting silicon micromachining techniques, the fabrication of ultrasonic receiver arrays suitable for wideband and high performance applications is demonstrated. Thanks to their high miniaturization level, the devices presented may be suited to minimally invasive...
Crack measurement is an important technique in structural monitoring, which is presently implemented with macroscopic devices characterized by rather demanding power consumption requirements. Such devices, consequently, are not very well suited for wireless operation, which is particularly interesting for specific applications involving deployment of a number of crackmeters within large-scale ageing...
We report about the fabrication of double-ended tuning fork (DETF) single-crystal silicon sensors starting from SOI substrates in which a novel line narrowing technique is adopted in order to shrink the electrostatic coupling gaps between the moving and fixed electrodes. By using conventional near-UV lithography, this solution provides the possibility to control gaps scaled down to 200 nm on an oxide...
The authors present an electronic system fitted in an off-the-shelf programmable system on chip (PSoCtrade) mixed signal array device from Cypress Semiconductors devoted to readout of a capacitive biosensor. The offset voltages of the analog blocks must properly be taken into account in order to obtain a good reproducibility of the performance of different chips and different lots and for accurate...
The results of a thorough thermoelectric characterization, performed both in a vacuum chamber and at atmospheric pressure, of ultra-low-power hotplates based on suspended structures with different layouts are presented in this work and compared with thermoelectric 2D and thermal 3D finite elements simulations. Electrical and thermal properties of the thin films used in the devices have been also measured,...
We propose an experimental and theoretical investigation of the effect of heat exchange through air upon the operation of on-chip test microstructures for heat conductivity measurements on thin films. By comparing measurements performed in vacuum (the usual method applied in most of the literature) and in air, a difference is devised on the determined thermal conductivity values in the two cases,...
We propose a comparison among different solutions for realizing polysilicon thermoelectric transducers, with five different types of thermoelements based on Al/polysilicon and two level polysilicon design, using different doping (of p and n-type) for the poly layers. The device performances are evaluated on a test geometry with electrical measurements and the performance obtained with the various...
A method suited to perform wafer-level measurements of thermal conductivity on thin films by exploiting micromachined test structures is proposed. To this purpose, a measurement procedure able to compensate for instrumental offsets and sensitivity limits typically existing in a standard wafer-level electrical instrumentation, and to eliminate the influence of heat exchange through air is applied....
We propose a method to characterize the main figures of merit of IR thermopile detectors by means of electrical measurements performed at the wafer level. Finite element simulations are adopted in order to compare the results of wafer-level measurements with the actual device responsivity as expected by optical measurements. The employed finite-element model is validated by comparison with experimental...
A preliminary study is proposed aimed at developing a novel process for thin film thermopile detectors based on Pt-polysilicon thermoelements realized on a silicon substrate. Good contacts between Pt and heavily doped n and p-polysilicon have been achieved by using a Ti/TiN/Pt barrier structure. Step coverage of Pt on 300 nm high polysilicon steps obtained by RIE etching has been evaluated by wafer...
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