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A new combination of long millisecond (1-2.5 ms) flash anneal at high peak temperature(1200-1300°C) and a new absorber with low deposition temperature (<;400°C) have been developed to generate highly activated (Rs~ 500 ohm/sq), sub-20 nm abrupt (≤ 3 nm/decade) N+ and P+ junction. This new approach also provides sub-2 nm N+ and P+ junction dopant motion control with multiple long ms-flash which...
Cluster ion implantation offers an attractive alternative approach to realize applications in semiconductor devices at 22 nm node and beyond. We present here the advantages of cluster ions with their special property of creating self-amorphous layer even at a lower dose. Here we show XTEM, SIMS and sheet resistance (Rs) measurements to elucidate the advantages of heavier cluster ion species like B...
As the demand for ever shallower, highly active and abrupt junctions continues, it is important to look at both the doping and activation portions of junction formation as a unit process. Advanced doping is useless without annealing methods that limit diffusion and provide high levels of electrical activation and new annealing techniques cannot make the junctions shallower than the as-doped profiles...
Strained silicon-on-insulator (sSOI) was exposed to high-temperature (1200-1350degC) annealing and high-dose 60Co gamma-ray irradiation (51.5 kGy) to study the tenacity of the bond between the strained Si film and the underlying buried oxide. All samples were characterized by UV Raman, pseudo-MOSFET (psi-MOSFET) current-voltage, Hall mobility, and photoluminescence (PL) to verify any change in strain...
We present results for B18H22 implants using ClusterBoron material for PMOS ultra-shallow junction (USJ) applications using solid phase epitaxial regrowth (SPER), high temperature spike anneal, impulse RTP (iRTP) and Flash Assisted RTPTM anneals. The effect of co-implants on boron activation (Rs) and junction depth (Xj) are compared for both B18SH22 and BF2 implants. We show that the Rs, Xj parameters...
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