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A one-transistor nonvolatile SRAM (ONSRAM) on a silicon nanowire (SiNW) SONOS is demonstrated. A nonvolatile memory (NVM) property is attained by employment of O/N/O gate dielectric stacks as an electron storage node, and SRAM functionality is achieved by exploiting latch phenomena of a floating body in SiNW. Abrupt inverter switching, superior sensing current (??21??A), and robust interference immunity...
A new paradigm for silicon memory technology is proposed. A technological breakthrough that will overcome the saturation in revenue obtained from `scaling??, a novel type of fusion memory is presented. A high-speed DRAM and non-volatile flash memory are integrated in a single memory transistor. The memory cell is named unified-random access memory (URAM), as multi-functional operation is processed...
This letter reports the fabrication of polycrystalline silicon thin-film transistors (poly-Si TFT) on glass substrates using Al oxide films by anodizing. The a-Si films were deposited with mixture gas of argon and helium to minimize the argon incorporation into the film. The a-Si films were then laser crystallized using XeCl excimer laser irradiation and a four-mask-processed poly-Si TFTs were fabricated...
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