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New gate dielectric substitute for high-k application requires well matched lattice parameters and an atomically defined interface with Si for optimal performance. Using molecular beam epitaxy technique, we have grown on Si(111) crystalline rare-earth oxide ultrathin films, (Gd x Nd 1−x ) 2 O 3 (GNO), a multi-component material that is superior to either of its binary...
This paper presents experimental work on studying the detailed structure and strain relaxation of nanometer thick Nd2O3 films epitaxially grown on Si(111) substrates using molecular beam epitaxy (MBE). Investigations by various diffraction methods demonstrate that the Nd2O3 layers exhibit a well-ordered cubic bixbyite structure with a single orientation, perfect crystallinity and a sharp interface...
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