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The reliability of SiGe:C HBT devices fabricated using the Freescale’s 0.35-μm RF-BICMOS process was evaluated using both conventional and step stress methodologies. This device technology was assessed to determine its capability for various power amplifier applications (e.g., WLAN, Bluetooth, and cellular phone), which are more demanding than conventional circuit designs. The step stress method was...
Effects of gamma-radiation in Al-gate and Si-gate CMOS transistors have been investigated in this paper. It has been found that, besides the well-known threshold voltage instabilities, radiation causes the gain factor instabilities as well. These instabilities of CMOS transistor electrical parameters have been found to be caused by significant increase of positive gate oxide charge density and somewhat...
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