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This manuscript describes our W-band LNA design using commercial 90nm CMOS process. For effectively extending the amplifier's bandwidth without compromising its wideband matching or noise figure, a combination of common-source and cascode gain stages are employed for the five-stage circuit design. This 1200×900μm2 low-noise amplifier has more than 10dB gain and around 12dB noise figure, with 41mW...
In this paper, a low power low-noise amplifier (LNA) using inductor-coupling resonated technique is designed for ultra-wideband (UWB) wireless system. The design consists of a wideband input impedance matching network, one stage cascode amplifier with inductor-coupling resonated load, and an output buffer; it was fabricated in TSMC 0.18 um standard RF CMOS process. The UWB LNA gives 10.8 dB power...
In this paper, a CMOS low-noise amplifier (LNA) is designed for ultra-wideband (UWB) wireless receiver system. The design consists of a wideband input impedance matching network, two stage cascode amplifiers with shunt-peaking load and an output buffer for measurement purpose. It was fabricated in UMC 0.18 mum standard RF CMOS process. The LNA provides 14.1 dB maximum power gain between 2.3G Hz-8...
A current reused low-noise amplifier (LNA) with gain compensated to extend the bandwidth which is designed for ultra-wideband (UWB) wireless receiver. The design consists of two cascode common-source amplifier and an output buffer which is implemented in 0.18 um RF CMOS process. The LNA gives 13.1 dB gain; 9.1 GHz 3 dB bandwidth (3.1-12.2 GHz) while consuming 13.9 mW through a 1.8 V supply. Over the...
In this paper, a CMOS low-noise amplifier (LNA) is designed for ultra-wideband (UWB) wireless receiver system. The design consists of a wideband input impedance matching network, a cascoded amplifier with shunt-peaked load, a RLC-impedance feedback loop and an output buffer for measurement purpose. It is fabricated in TSMC 0.18 um standard RF CMOS process. The LNA gives 11.5 dB maximum power gain...
A multi-stage low-noise amplifier (LNA) with LC-tank load to extend the bandwidth is designed for ultra-wideband (UWB) wireless receiver. The design consists of three LC-tank cascode amplifier and one output buffer and is implemented in 0.18 mum RF CMOS process. The LNA gives 14.5 dB gain and 7.2 GHz 3 dB bandwidth (3.1 -10.3 GHz) while consuming 22.8 mW through a 1.5 V supply. Over the 3.1 GHz -10...
In this paper a CMOS dual-wideband low-noise amplifier (LNA) is designed for ultra-wideband (UWB) wireless receiver radio system. The design consists of a wideband input impedance matching network, two stage cascode amplifiers with shunt-peaked load, two 2nd-order notch filters and an output buffer for measurement purpose. It is simulated in TSMC 0.18 mum standard RF CMOS process. The LNA gives 13...
This paper presents a low-noise amplifier (LNA) with switching groups for MB-OFDM Group-A, C, D ultra-wideband wireless radio system. The LNA is designed and implemented in TSMC 0.18 um RF CMOS process. Simulation results show that power gain of ll.ldB, input and output matching lower then -8.4 dB and -8.3 dB, and a minimum NF of 3.8 dB can be achieved, while the power consumption is 24.8 mW through...
In this paper a CMOS low-noise amplifier (LNA) is designed for ultra-wideband (UWB) wireless receiver radio system. The design consists of a wideband input impedance matching network, a cascoded amplifier with shunt-peaked load, a RLC-impedance feedback loop and an output buffer for measurement purpose. It is simulated in TSMC 0.18um standard RF CMOS process. The LNA gives 13.65dB maximum power gain...
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