The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A novel GalnNAs/AlAs/AlGaAs double-barrier quantum-well-infrared-photo-detector was characterized by photoluminescence, x-ray diffraction, photoluminescence excitation, photocurrent spectra and dark current measurements. The photoluminescence peak at ~1.2 eV and the photocurrent peak at 1.24 mum originate from the interband transition and inter-subband transition, respectively, in the GalnNAs well...
AlGaAs/GaAsNSb heterojunction bipolar transistors (HBTs) with low turn-on voltage have been fabricated. The turn-on voltage of the device fabricated from an as-grown sample is ~180 mV lower than that of a conventional AlGaAs/GaAs HBT. The effect of rapid thermal annealing on device performance is an increase in the gain from ~8.5 to ~20. However, the knee voltage of the annealed sample (~3 V), as...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.