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GaAs-based double-heterojunction p–i–n photodetectors using In z Ga 1−z As 1−x−y N x Sb y in the i-layer are fabricated for the first time using the solid source molecular beam epitaxy growth method. A peak responsivity of ∼0.29 A/W, corresponding to quantum efficiencies (QE) of 38% is attained from the best p–i–n device between 0.9 and 1.1 μm. The dark current...
An experimental investigation is presented on the influence of the laser excitation on the photoluminescence (PL) linewidth in silicondoped InAlAs layers grown lattice-matched to InP substrates by molecular beam epitaxy. It was observed that the linewidth decreases with increasing laser excitation power. A model describing an unbalanced migration of photo-generated charge carriers owing to the presence...
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