1.31 μm GaAs-based heterojunction p–i–n photodetectors using InGaAsNSb as the intrinsic layer grown by molecular beam epitaxy

GaAs-based double-heterojunction p–i–n photodetectors using In _z Ga _1−z As _1−x−y N _x Sb _y in the i-layer are fabricated for the first time using the solid source molecular beam epitaxy growth method. A peak responsivity of ∼0.29 A/W, corresponding to quantum efficiencies (QE) of 38% is attained from the best p–i–n device between 0.9 and 1.1 μm. The dark current is ∼70 nA at a reverse bias of 2 V and the cutoff wavelength reaches ∼1.4 μm. The surfactant effect generated by the presence of Sb in this material allows thick high quality dilute nitride material growth. A Sb-free p–i–n device consisting of InGaAsN/GaAs is also fabricated to compare the device performance with the InGaAsNSb/GaAs p–i–n devices.