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Rare-earth (RE) elements present in the growth from the liquid phase have purifying effect on III–V semiconductors due to REs high affinity towards chemical species of shallow impurities. We demonstrate this purifying effect on the preparation of InP layers by liquid phase epitaxy with Pr admixture to the growth melt. We employ low temperature photoluminescence, capacitance–voltage and Hall effect...
We report on the influence of rare earth (RE) elements (Pr, Er, and Dy) addition during vertical Bridgman low pressure synthesis on the properties of InP crystals. The temperature dependent Hall measurement and low-temperature photoluminescence (PL) spectroscopy were employed to study the changes in electrical and optical properties of the crystals. The observed changes are attributed to the gettering...
Rare-earth (RE) elements present in the growth from the liquid phase have purifying effect on III-V semiconductors due to RE's high affinity towards chemical species of shallow impurities. We demonstrate this purifying effect on the preparation of InP-based structures by liquid phase epitaxy with Pr admixture to the growth melt. We employ low temperature photoluminescence, capacitance-voltage and...
The influence of Yb and Yb2O3 addition on the properties of InP epitaxial layers is reported. We concentrated on the investigation of gettering and/or doping efficiency of Yb added in various forms. Layers prepared by Liquid Phase Epitaxy were examined by using SEM, SIMS, low temperature PL spectroscopy, C-V and temperature dependent Hall measurements. The efficient gettering was confirmed for both...
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