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A homotype negative differential resistance (NDR) device with GaAs delta-doped structure prepared by molecular beam epitaxy is demonstrated. Two Si and one Be delta-doped planes were inserted into the GaAs layer, i.e. n- delta n/sup +/-i- delta p/sup +/-i delta n/sup +/-n, to form the required resonant tunnelling structures. Electrons are thus transported from the conduction band of the n/sup +/ layer...
The concept to modulate the internal barrier of a regenerative switching device is proposed. A new structure of three-terminal GaAs p+-n--δ(p+)-n--n+ switching device prepared by molecular beam epitaxy is successfully developed. The third terminal was directly contacted to the δ(p+) barrier using the V-groove etching technique, in which the δ(p+) barrier height can be directly modulated by the external...
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