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p-GaN/u-GaN alternating-layer nanostructures are grown with molecular beam epitaxy to show a low p-type resistivity level of $0.038~\Omega $ -cm. The obtained low resistivity is due to the high hole mobility in the u-GaN layers, which serve as effective transport channels of holes diffused from the neighboring p-GaN layers. The Mg doping in a thin p-GaN layer can lead to a high Mg-doping concentration...
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