The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Electron spectrum of δ-doped quantum well in n-GaAs is investigated by means of Thomas - Fermi (TF) method at finite temperatures. This method shows fast convergence and good accuracy. At 2D doping 1013...2 × 1013 cm-2, the simplest TF method (T = 0) can be used up till the temperatures T ≤ 200 K.
Using measurement techniques and appropriate models for III-V semiconductor compound transistors we have implemented a large signal model for a commercial LDMOS transistor. Based on this model a 4 Watt UHF class AB power amplifier was simulated and evaluated. The power amplifier was characterized using an aluminum test bench and microstrips. Experimental results shown an output power of 36.3 dBm for...
Based on the negative differential conductance phenomenon, we theoretically investigate the propagation and amplification of space charge waves on the surface of a strained Si/SiGe heterostructure at 77 K. A comparison between the n-GaAs thin film and strained Si/SiGe heterostructure of this amplification effect is included as well. We have obtained 2D results of the propagation and amplification...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.