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High quasi-Fermi-level splitting in monocrystalline n-type CdTe/MgCdTe double-heterostructures can be effectively extracted using p-type a-Si:H contacts, achieving Voc over 1 V. We show high-efficiency monocrystalline CdTe with Voc around 1V, evidencing a built-in voltage between p-type a-Si:H and n-CdTe of 1.1 V using capacitance-voltage measurements.
We discuss aspects of low temperature processing relating to the formation of through-silicon vias [TSV] for 3D-IC applications. An optimized deep silicon etch process produces 10:1 aspect ratio vias with scallop size less than 50 nm and with minimal bow and sidewall roughness. Emphasis is given to a low temperature [ges150degC] PECVD dielectric liner deposition process which produces stable, low...
A micro-beam of a creative smart resonating gas sensor with a self-actuating and detecting (SAD) system is presented. The smart SAD sensor, in which the resonance frequency shifting of the MEMS cantilever is monitored to probe its mass change caused by adsorption of certain gas molecules, has never need exclusive detection circuits and instruments, and the micro-beam has never need additional detective...
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