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This paper presents a novel memory cell design as a variant of Lior Atias' 13T cell (mentioned as LA13T cell in this paper) for low-voltage operation and ultra-low power space applications. Using C-element as a replacement of dual-driven inverters in the LA13T cell, our proposed radiation hardened by design memory cell (referred to as RHD13T) can effectively block the unwanted paths from Vdd to Gnd...
In this paper, a highly reliable radiation hardened by design memory cell (RHD12) using 12 transistors in a 65-nm CMOS commercial technology is proposed. Combining with layout-level design, the TCAD mixed-mode simulation results indicate that the RHD12 not only can fully tolerant the single-event upset occurring on any one of its single nodes but can also tolerant single-event multiple-node upsets...
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