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A broad-band Mach-Zehnder-interferometer-synchronized flat-top arrayed waveguide grating is presented with a 0.5-dB bandwidth of 12 nm over 90 nm of spectral range and a central excess loss value of −0.5 dB.
Silicon oxynitride, a dielectric material with excellent optical properties, is applied for a wide range of integrated optical devices operating at visible or NIR wavelengths. High-quality channel waveguides are reliably fabricated by plasma enhanced chemical vapor deposition and reactive ion etching following standard lithography. Based on a general, polarization-independent channel waveguide layout...
The electro-optic coefficients of self-organized InAs quantum dot layers in molecular beam epitaxy grown laser structures in reverse bias have been investigated. Enhanced electrooptic coefficients compared to bulk GaAs were observed.
Understanding charging mechanisms and charge retention dynamics of nanocrystal (NC) memory devices is important in optimization of device design. Capacitance spectroscopy on PECVD grown germanium NCs embedded in a silicon oxide matrix was performed. Dynamic measurements of discharge dynamics are carried out. Charge decay is modelled by assuming storage of carriers in the ground states of NCs and that...
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