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Data intensive workloads increase significantly bandwidth and power pressures to the memory system. One possible solution is processing-in-memory (PIM) which moves several logic components into the main memory to accelerate the logic computation. Recently, the concept of processing-in-nonvolatile-memory (PINVM) was proposed to against the technology issue in which the DRAM and logic technology require...
Current-induced domain wall motion (CIDWM) is regarded as a promising way towards achieving emerging high-density, high-speed and low-power non-volatile devices. Racetrack memory is an attractive concept based on this phenomenon, which can store and transfer a series of data along a magnetic nanowire. Although the first prototype has been successfully fabricated, its advancement is relatively arduous...
Density is one of the major design factors of magnetic random access memory (MRAM). Very recently, a tri-level cell (TLC) structure was proposed to enhance the storage density of MRAM. In this work, we propose a new self-reference sensing scheme for the TLC MRAM cell based on its unique property called state ordering. Simulation results show that compared to conventional design, our proposed self-reference...
Spin transfer torque magnetic random access memory (STT-MRAM) has been considered as a potential candidate for the next-generation nonvolatile memory. However, as technology continuously scales down, the sensing margin (SM) of STT-MRAM is significantly degraded because of the increased process variations and reduced supply voltage. Meanwhile the critical switching current of magnetic tunnel junction...
Racetrack memory is an emerging non-volatile memory based on spintronic domain wall technology. It can achieve ultra-high storage density. Also, its read/write speed is comparable to that of SRAM. Due to the tape-like structure of its storage cell, a “shift” operation is introduced to access racetrack memory. Thus, prior research mainly focused on minimizing shift latency/energy of racetrack memory...
Spin transfer torque magnetic random access memory (STT-MRAM) has become one of the leading candidates for the next generation memory applications, thanks to its many attractive features. However STT-MRAM faces severe reliability challenges because of its intrinsic physical characteristics and the continuously scaling technology process. Thereby multi-bit error correction codes are considered indispensable...
In this article, we present the architecture design of high-performance Asynchronous Look Up Table (LUT) embedded with a non-volatile Magnetic RAM (MRAM) as the configuration memory, called MALUT. It promises a number of advantages over the traditional FPGA circuits such as “free” standby power, high operating frequency and instant on/off etc. Thanks to the 3D integration and high density of MRAM,...
SRAM is an indispensable component in modern microprocessors to store copies of the most frequently used data from the main memory. The high write/read speed of SRAM assures the desired memory throughput required by the internal high operating frequency of the microprocessor. However SRAM memory is volatile, which causes some drawbacks for computer systems such as high standby power and low data security...
Spin Transfer Torque (STT) writing approach based Magnetic Tunnel Junction (Spin-MTJ) is the excellent candidate to be used as Spintronics device in Magnetic RAM (MRAM) and Magnetic Logic. We present the first Non-volatile Flip-Flop based on this device for Field Programmable Gate Array (FPGA) and System On Chip (SOC) circuits, which can make these circuits fully non-volatile by storing permanently...
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