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Within the framework of Keldysh impact ionization model the calculation of effective threshold energy for silicon MOSFET with 100 nm channel length by means of ensemble Monte-Carlo simulation is performed. The possibility of impact ionization rate treatment with one-parameter Keldysh model in pre-breakdown and breakdown transistor operation mode using calculated effective threshold energy value is...
In this work a new contribution to the simulation of deep submicron, nanometer-scale MOFFET transistor characteristics is considered. Proposed approach is based on the use of traditional “compact” submicron MOS device models. Parameters of these models are verified by means of fitting procedure to results obtained by use exact physical models taking into account quantum effects accompanying charge...
The self-consistent calculation of surface roughness scattering rate in GaAs/AlAs transistor structure with one-dimensional electron gas has been performed taking into account the collisional broadening. The influence of the gate bias on the scattering rate is also studied
The dependencies of electron mobility in thin undoped GaAs quantum wires on the lattice temperature and surface roughness correlation length have been calculated at the electric quantum limit using Monte Carlo method. All the dominant scattering mechanisms of charge carriers in GaAs quantum wires are taken into account in considered case. The scatterers are polar optical phonons, surface phonons,...
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