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The results of study of the influence of boron and phosphorous doping and hydrogen content on transport properties and thermally induced metastability of LPCVD a-Si are reported. The thermally induced metastability has been observed in both unhydrogenated and hydrogenated P-doped a-Si films. Metastability is a barrier for wide application of a-Si such solar cells. In this paper we report our studies...
We studied relaxation of defects formed during fast quenching in low pressure chemical vapour deposition (LPCVD) amorphous silicon with different hydrogen concentrations (from 0.05 at.% to 15 at.%) doped with boron or phosphorous (2 at.%). Results of measurement of dark conductivity after quenching and slow cooling as well as measurement of the isothermal relaxation of dark conductivity after quenching...
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