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FinFET devices are extensively investigated due to the prospects for application in the sub-100 nm CMOS integrated circuits fabrication. Small size of the FinFETs and the properties of technological processes strongly influence their electrical characteristics. The random variations of the characteristics lead to a mismatch effect critical from the viewpoint of design and fabrication. In the paper...
The aim of this paper is extensive electrical characterization of MOS devices with ultrathin SiON gate dielectric. I-V characteristics are measured and basic transistor parameters (threshold voltage, DIBL, subthreshold swing and series S/D resistance) are extracted and their dependence on channel length investigated. Moreover, the dependence of gate current on channel length and the quality of the...
Przedstawiono historię elektroniki półprzewodnikowej ze szczególnym uwzględnieniem tranzystora MOS, trudności związane z dalszą miniaturyzacją, możliwe kierunki rozwoju oraz wybrane ograniczenia fundamentalne.
This paper presents for the first time the results of charge-pumping (CP) measurements of FILOX vertical transistors. The aim of these measurements is to provide information on the density of interface traps at the Si-SiO2 interface fabricated in a non-standard process. Flat-band and threshold voltage, as well as density of interface traps are determined. Good agreement between threshold-voltage values...
Omówiono wpływ mikroelektroniki na rozwój technik technologii informacyjnych, krótko przedstawiono najważniejsze etapy historii mikroelektroniki, przedyskutowano wybrane problemy skalowania tranzystora MOS oraz sposoby ich rozwiązywania, rozważono ograniczenia dla działania prawa Moore'a w przyszłości.
The paper briefly presents the history of microelectronics and the limitations of its further progress, as well as possible solutions. The discussion includes the consequences of the reduction of gate-stack capacitance and difficulties associated with supply-voltage scaling, minimization of parasitic resistance, increased channel doping and small size. Novel device architectures (e.g. SON, double-gate...
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