Journal of Telecommunications and Information Technology > 2007 > nr 3 > 73-77
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journal ISSN : | 1509-4553 |
journal e-ISSN : | 1899-8852 |
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Bibliography
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[1] C. P. Auth and J. D. Plummer, “Scaling theory for cylindrical, fullydepleted, surrounding-gate MOSFETs”, IEEE Trans. Electron Dev., vol. 18, pp. 74–76, 1997.
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[2] H. Liu, Z. Xiang, and J. K. O. Sim, “An ultrathin vertical channel MOSFET for sub-100 nm applications”, IEEE Trans. Electron Dev., vol. 50, pp. 1322–1327, 2003.
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[3] D. Donaghy, S. Hall, C. H. de Groot, V. D. Kunz, and P. Ashburn, “Design of 50-nm vertical MOSFET incorporating a dielectric pocket”, IEEE Trans. Electron Dev., vol. 51, pp. 158–161, 2004.