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Polish Government Program ldquoNew technologies based on silicon carbide and their applications in high frequency, high power and high temperature electronics rdquo covers an project package that consists of three general tasks. The contribution presents the overview of projects in the field dealing with the design and manufacturing of power SiC semiconductor devices.
W ramach prowadzonych badań wykonane zostały diody Schottky'ego Ir/4H-SiC, IrO2/4H-SiC, Ni/4H-SiC. W artykule opisany został wpływ różnych procesów przygotowania powierzchni podłoża z węglika krzemu (4H-SiC) na parametry elektryczne uzyskanych diod. Sprawdzono skuteczność stosowanej powszechnie w technologii krzemowej procedury RCA, wpływ kąpieli w buforowym roztworze kwasu fluorowodorowego (HFbuff...
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