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W pracy przedstawiono wyniki charakteryzacji cienkich warstw tlenku hafnu wytwarzanych metodą ALD. Zbadano wpływ wygrzewania na parametry elektrofizyczne warstw HfO₂ oraz HfO₂/SiO₂ oraz wpływ zastosowania warstwy podkładowej na właściwości elektryczne struktur MIS z warstwa tlenku hafnu osadzoną na węgliku krzemu. Zastosowanie warstwy podkładowej z SiO₂ znacznie poprawiło parametry kondensatorów MIS...
Nanocrystalline Al 2 O 3 layers were produced by means of impulse plasma deposition (IPD) technique on Si and SiC substrates. Morphology, microstructure and chemical composition of films and film/substrate interfaces were investigated using SEM and SIMS methods. After depositing on top of the layers metal (Al) dot contacts also C-V and I-V measurements of so produced metal-insulator-semiconductor...
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