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Avalanche breakdown characteristics are essential for designing avalanche photodiodes. In this letter, we investigated the effects of adding Ga to Al1–xGaxAs0.56Sb0.44 quaternary alloys. Using p-i-n diodes with a 100-nm i—region and alloy composition ranging from $x=0$ to 0.15, we found that the bandgap energy of Al1–xGaxAs0.56Sb0.44 reduces from 1.64 to 1.56 eV. The corresponding avalanche breakdown...
We investigate a novel In0.53Ga0.47As/Al0.85Ga0.15As0.56Sb0.44 (hereafter InGaAs/AlGaAsSb) avalanche photodiode (APD) for high speed operation. The fabricated APD with 20 µm diameter exhibits a maximum responsivity of 5.33 A/W at 1550 nm, a maximum 3-dB bandwidth (f3dB) of 14 GHz, and a clear eye diagram at 10 Gb/s. A GBP value as high as 407.4 GHz was extracted. The results demonstrate the potential...
In this work, we present the study on Separate Absorption, Charge and Multiplication (SACM) APDs utilising In0.52Al0.48As as the multiplication layer and In0.53Ga0.47As/GaAs0.51Sb0.49 periodic heterostructures as the absorption layer. In0.52Al0.48As lattice matched to InP has been shown to have superior excess noise characteristics and multiplication with relatively low temperature dependence compared...
We demonstrate the InGaAsN PIN structures grown by MBE with photoresponse of approximately 1.3 μm and optimized by post growth annealing. The assessment of the annealing study was carried out by comparing the dark current density and photocurrent spectra of the as-grown and annealed samples. The dark current for an optimally annealed InGaAsN PIN is approximately 2 μAcm-2 at an electric field of 100...
The authors report the avalanche characteristics of the type-II absorption region when subjected to electric fields ranging from 60 kV/cm to 260 kV/cm and compare its behaviour to that of bulk In0.53Ga0.47As. Electron and hole initiated multiplication is performed on the type-II PIN photodiodes with 150 pairs of In0.53Ga0.47As/GaAs0.51Sb0.49 layers in the intrinsic region and highly doped In0.53Ga...
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