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3D printing, also known as additive manufacturing, has been considered as the next big thing that can potentially spread as cell phone industry. Nowadays, product resolution restricted by material and fabrication process is ranging from 20 to 300 pm and still has the trends toward higher precision. However, tradeoff between time costs and resolution is always a dilemma in Fused Deposition Modeling...
We report on the operation of electrically pumped 1.3µm InAs QD laser directly grown on a Si substrate using InAlAs/GaAs dislocation filter layers with a threshold current density of 194A/cm2 and output power of ~80mW.
Numerical simulation of far field patterns of integrated lens antenna consisting of planar wideband clover leaf shaped dipole antenna is carried out in the presented work. W band performance of planar antenna is obtained by FEM based HFSS shows wide band behavior, symmetric patterns and circular polarization. Lens mounted feed's characterization is modeled using ray tracing inside lens and diffraction...
This study mainly used Electrospraying and Taguchi method to investigate the optimum process of piezoelectric Zinc oxide (ZnO) nanorods parameters. Zinc oxide seed layer was electrosprayed on Au/Chromium/Silicon substrates. The electric field is around 660 V/mm. In this study, ZnO was made in an array to characterize. We used X-ray diffraction (XRD), photoluminescence (PL) and field emission scanning...
We present a room-temperature 1.3-µm InAs/GaAs quantum dot laser monolithically grown on Si(100). The threshold current at 20°C was 725A/cm2 and the emission wavelength was 1.302µm. The laser was operated in pulsed mode. The growth was enabled via the optimisation of the temperature of the initial nucleation layer of GaAs.
In this paper, La-incorporated with HfO2 thin films increase crystallization temperature which of thin films is observed from X-ray diffraction (XRD). By nano-Auger analysis, the results show that the Hf atom out-diffusion into Si substrate is increased when the La dopant in the upper layer. The out-diffusion of Hf also affects the thickness of silicate. It is suggested to be the origin of leakage...
In this paper, an H-plane horn antenna is designed and studied in substrate integrated waveguide (SIW) structures. The SIW horn input reflection coefficient and output radiation at 60 GHz have been simulated for a GaAs substrate of 100 um and 300 um thick, respectively. Microstrip line to SIW transition is also designed for possibly realization of the antenna into commercial GaAs MMIC circuit board.
In order to achieve aggressive scaling of the equivalent oxide thickness (EOT) and simultaneously reduce leakage currents in logic devices, silicon-based oxides (SiON / SiO2) have been replaced by physically thicker high-κ transition metal oxide thin films by many manufacturers starting from the 45 nm technology node. CMOS process compatibility, integration and reliability are the key issues to address...
The disordered bonds may generate a redistribution of trap states, resulting in unstable electrical characteristics such as threshold voltage, subthreshold swing, and mobility of carriers. The weak or broken bonds may contribute to the redistribution of trap states, and lead to unstable electrical characteristics of the a-Si:H TFTs on plastic substrates. We conclude that the DOS of an a-Si:H layer...
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