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In this paper, we demonstrate that the cascode amplifier topology can be extended to operating frequencies >500 GHz. Two packaged cascode amplifiers are reported, including a broadband 3 stage amplifier with ~17 dB gain and 8.3 dB packaged noise figure at 300 GHz and a narrowband amplifier with 10 dB gain at 0.55 THz measured in package. Both of these amplifiers use 30 nm InP HEMT transistors,...
In this paper, an H-plane horn antenna is designed and studied in substrate integrated waveguide (SIW) structures. The SIW horn input reflection coefficient and output radiation at 60 GHz have been simulated for a GaAs substrate of 100 um and 300 um thick, respectively. Microstrip line to SIW transition is also designed for possibly realization of the antenna into commercial GaAs MMIC circuit board.
In this work, enhanced noise and linearity performance in 0.25 μm gate-length AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MISHEMTs) on high-resistivity silicon substrate using atomic-layer-deposited (ALD) Al2O3 as gate dielectric is reported. High current gain cut-off frequency fT above 40 GHz and low minimum noise figure NFmin of ~1.0 dB at 10 GHz were achieved. This...
Photoconductive semiconductor switches (PCSSs) are considered as promising device s for high power applications. Since picosecond optoelectronic switching in silicon was published in 1975, especially from 1977, in which Si was replaced by GaAs, PCSSs have been significantly used in pulsed power technology, such as high-power ultra wideband microwave source and compact pulsed power generator. Since...
In order to generate ultrafast electrical pulse by using photoconductive semiconductor switch (PCSS), a switch with a gap of 14 mm was fabricated from semi-insulating GaAs. Illuminated by laser pulse at wavelength of 1064 nm and 532 nm, photoconductivity tests of the PCSS were performed at different bias voltages. Preliminary experimental results suggest that the rise time of the current through the...
In response to the continually increasing appetite for bandwidth, most transistor technologies have recently made great strides towards higher cutoff frequencies: Silicon MOSFETs, SiGe HBTs, InP-based HEMTs and a variety of InP -based HBTs all show cutoff frequencies fT and/or fMAX exceeding 300 GHz, and in some cases approaching 800 GHz. Proponents of various technologies have stated that the development...
Maximizing In composition in the channel structures of high-electron-mobility transistors on InP is one important aspect of achieving devices capable of operating beyond 300 GHz. In this article, we compare dc and rf performance results from two variations of one such device design, incorporating a composite-channel structure comprised of InAs clad by InP-lattice-matched InGaAs. The only difference...
A 9 watt AlGaAs/InGaAs/GaAs PHEMT MMIC power amplifier for Ku band applications is presented. This two-stage amplifier with chip size of 11.12 mm2 (4.52 mm times 2.46 mm) is designed to fully match 50 ohm input and output impedance. With 8 volts and 900 mA DC bias condition, 12 dB small signal gain, 39.5 dBm (9 Watt) saturated output power with 30% power-added efficiency from 14 to 14.2 GHz can be...
The In-segregation in 7.5-nm Ga1-x'Inx'Ny'As1-y'/GaAs single quantum well (QW) is studied theoretically. The nominal (In, N) contents in the QW are chosen to be (0.35, 0.015) and (039, 0.03) for the emission wavelengths at 1.3 and 1.55 mum, respectively. Muraki's model is used to model the composition profiles in the QWs. In-plane strain, confinement potential, and sub band energy levels of the QW...
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