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This work is aimed at optimising the static performance of a high voltage SOI LDMOSFET. Starting with a conventional LDMOSFET, 2D and 3D numerical simulation models, able to accurately match datasheet values, have been developed. Moving from the original device, several design techniques have been investigated with the target of improving the breakdown voltage and the ON-state resistance. The considered...
A new SOI high-voltage device with a step thickness sustained voltage layer (ST SOI) is proposed. The electric field in the drift region is modulated, and that in the buried layer is enhanced by the variable-thickness SOI layer, resulting in enhancement of breakdown voltage (BV). BV for the ST SOI with two steps is twice as high as that of the conventional SOI, maintaining the low on-resistance (R...
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