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In this paper, we present a new numerical model of the inversion charge power spectral density in FDSOI MOSFET devices with ultra thin body. Unlike previous classical models, we don't use the equivalent concept which relates the fluctuation of the oxide charge to the flat-band voltage fluctuation. Localized noise sources in the oxide are implanted into the model and by using a Green's function approach,...
In this paper, a new surface potential based compact model for long channel fully depleted SOI MOSFET with lightly doped ultra-thin body is presented. The 1-D Poisson equation is solved using the appropriate boundary conditions, and a closed-form surface potential solution is proposed for the front and back surface potentials. Finally the model was compared to numerical simulations and a good agreement...
This work presents an analytical explicit compact model for Ultra-Thin Body (UTB) SOI MOSFETs. It is a simplification of a previously published model for Asymetrical Double Gate MOSFETs with independent gate operation. Excellent agreements were obtained with both TCAD simulations and electrical measurements. The usefulness of the model for parameter extraction of state of the devices is also demonstrated.
Using a compact model derived for long channels ΠFET, TGFETs and planar FDSOI transistors, it is demonstrated that experimental fully depleted devices can operate in the 'back-interface inversion' regime even at VG2 grounded. As a result, two threshold voltages appear in the transistors, with an experimental difference of threshold voltages up to several hundreds mV for planar FDSOI devices. As a...
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