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A numerical model for inhomogeneous devices simulation as 2D-carbon nanotubes thin films is presented. This model takes into account nonlinear effects, in this work the proposed approach is based on tube-tube junctions which are presented as nonlinear dipoles depending on the nature of each junction (M/M), (SC/SC) and (M SC). Modified Nodal Analysis “MNA” and the adjoint network method are respectively...
In this paper, we present a study of 2-D Carbon Nanotubes “CNTs” thin film. Transport and noise fluctuation of two types of films are measured and compared. We have developed a theoretical model based on CNT physics, where the films are described as an electrical network. Simulations using a Modified Nodal Analysis “MNA” provide DC and noise characteristics comparable to the experimental results.
In this paper, a new surface potential based compact model for long channel fully depleted SOI MOSFET with lightly doped ultra-thin body is presented. The 1-D Poisson equation is solved using the appropriate boundary conditions, and a closed-form surface potential solution is proposed for the front and back surface potentials. Finally the model was compared to numerical simulations and a good agreement...
Through Silicon Via (TSV) has been used for back-end packaging and more recently, for front end active device integration. In this work we report recent progress and challenges for via cleaning, via filling and wafer bow/stress monitoring. Furthermore, the importance of preparation technique for accurate characterization of tungsten-filled TSV profile will be presented.
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