The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Heat Assisted Magnetic Recording (HAMR) is widely considered the leading technology to further extend the areal density growth of hard disk drives beyond the current perpendicular magnetic recording (PMR). The progress and maturity of HAMR technology are evidenced by Seagate's 1.0Tbpsi spin-stand basic technology demonstration [1] and the subsequent demonstration of a fully functional drive with more...
CMOS-compatible GaN-on-silicon technology with excellent D-mode MISHFET performance is realized. A low specific contact resistance Rc (0.35 Ω-mm) is achieved by Au-free process. MIS-HFET with a gate-drain distance (LGD) of 15 μm exhibits a large breakdown voltage (BV) (980 V with grounded substrate) and a low specific on-resistance (R ON,sp) (1.45 mΩ-cm2). The importance of epitaxial quality in a...
This paper summarizes our recent investigations of nano-wire n type tunneling field effect transistor (n-TFET) reliability by experimental measurements and physical analysis [1-3]. Large PBTI and HC degradations which are very different from those in conventional n-MOSFETs were observed. The results are interpreted by different degradation mechanism in TFET.
The dielectric spectroscopy of an impregnated paper and a type of vegetable oil was measured in the frequency domain. In order to investigate the effect of aging on the dielectric response, accelerated thermal aging was conducted on the paper samples and oils samples, respectively. Their dielectric responses were measured at intervals throughout the aging process. Since moisture has a great influence...
Chip attachment is an important step in packaging light-emitting diode (LED) chips. The attachment material provides mechanical support and heat dissipation. As high-power LED chips are targeted at general illumination applications, the thermal property of the die-attach material is critical to the light output and degradation of the lighting device. Silver epoxy, lead-free solder paste, and nanosilver...
CdSxSe1-x quantum dots (QDs) were prepared on silicon substrate by a simple physical method. The temperature dependent photoluminescence (PL) properties of the CdSxSe1-x QDs have been investigated in a temperature range of 10-300 K. The PL intensity reveals an unusual increasing behaviour with increasing temperature in the range of 180 - 260 K. And the energy gap shows a redshift of 62.23 meV when...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.