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Two unique gate oxide failure mechanisms are associated with deep trench processes for a 0.18 µm power semiconductor device. One failure mode is a “mini-LOCOS” defect, that is due to inadvertent oxidation of Si in the active area during deep trench oxidation. The other failure mode is due to slip associated with dislocations from the deep trenches. These defects are eliminated by optimizing the SiN...
Two unique gate oxide failure mechanisms are associated with deep trench processes for a 0.18 μm power semiconductor device. One failure mode is a “mini-LOCOS” defect, that is due to inadvertent oxidation of Si in the active area during deep trench oxidation. The other failure mode is due to slip associated with dislocations from the deep trenches. These defects are eliminated by optimizing the SiN...
This paper presents the propagation characteristics of the shear horizontal surface acoustic wave (SH-SAW) in ZnO (0deg, 90deg, psi) (11 2macr 0) textured ZnO films. ZnO (0deg, 90deg, 0deg) film/interdigital transducer (IDT) electrode/silica glass substrate structures were fabricated by RF magnetron sputtering. Experimental results demonstrate that SH-SAW was clearly excited in these structures. We...
It is difficult to generate longitudinal and shear bulk waves simultaneously at same frequency. In this study, we propose new film stack transducer structure consisting of two layers of c-axis 23deg-tilted ZnO films. The upper layer and lower layer in the stack have same thicknesses, and the c-axis tilt direction in the both layers are symmetric with respect to the film surface normal. This film stack...
Metal/high-k SOI MOSFETs with NiSi2/Si (111)-facetted FUSI S/D are promising for aggressively scaled devices down to sub-10 nm gate length. The facet junction technique that we have developed works more effectively as the gate length becomes smaller. This device concept can be applied to 3D structures such as FinFETs, and it can also relieve the scaling of SOI thickness
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