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Continued advancements in Si-based technologies - in particular SiGe BiCMOS technologies - have enabled mmWave integrated circuits designed for 77GHz automotive radar systems to reach production-level maturity. This paper will discuss the technology requirements for mmWave automotive radar products, and also present the evolution of the respective key figures of merit. Si-based CMOS challenges and...
A 90nm BiCMOS technology with a SiGe:C HBT having fMAX >400GHz is presented. Both lateral and vertical scaling of the SiGe bipolar transistor are described, enabling SiGe HBT performance metrics fT/fMAX of ∼230GHz/400GHz to be achieved with a minimum gate delay of <3ps. A medium breakdown device is also integrated, achieving an fT*BVCEO product of 310GHz*V. CMOS implant and HBT process optimizations...
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