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The electrical behavior of deca-nanometer ISE MOSFET with gate stack: ISEGaS has been investigated and a computationally efficient analytical model using Evanescent Mode Analyses (EMA), for solving two-dimensional Poisson's equation in the channel region, has been presented for accurate prediction of surface potential, electric field, subthreshold current and threshold voltage. An important short...
In this paper, a universal and computationally efficient subthreshold model for sub-100-nm nonuniformly doped channel MOSFET has been presented. The model incorporates drain-induced barrier lowering effect by means of the short-channel depletion width parameter d, which is evaluated using the voltage doping transformation method. The model can accurately predict the following: 1) surface potential;...
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