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In this paper, the impact of gate stack configuration onto the RF/analog and large signal linearity characteristics of insulated shallow extension (ISE) MOSFET is explored. The key factors affecting the device performance and the physics behind it are also scrutinized. The analog performance metrics- gm/ids, rout, vea (early voltage) & gm/gd gain and device linearity metrics-vip2 & vip3 and...
This paper discusses a hot-carrier-reliability assessment, using ATLAS device simulation software, of a gate electrode workfunction engineered recessed channel (GEWE-RC) MOSFET involving an RC and GEWE design integrated onto a conventional MOSFET. Furthermore, the impact of gate stack architecture and structural design parameters, such as gate length, negative junction depth, substrate doping (NA),...
RF circuit application requires transistors with low intermodulation distortion and thus, linearity analysis is desired to optimize device structure and circuit design. In this work, RF linearity of Dual Material Gate Insulated Shallow Extension Gate Stack (DMG ISEGaS) is investigated using ATLAS-2D: device simulation software and is compared with its Single Material Gate (SMG) counterpart. The work...
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