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Gallium Nitride (GaN) transistors are emerging as promising candidates for making high-frequency, low-loss and small-size power converters. To realize normally-off, p-GaN gate technique is widely adopted in commercially available GaN-based power devices. However, owing to the distinctions in device structure, the intrinsic capacitances with regard to gate region vary from those of Si MOSFET. Besides,...
This paper presents a terahertz (THz) spectrometer based on high temperature superconducting Josephson junction. The YBa2Cu3O7 (YBCO) bi-crystal Josephson junctions (JJS) with log-periodic antennas are used as detectors. In the low temperature, with the signal measurement, data acquisition and human-computer interactive system, the automatic measurement system of THz spectrometer is finally accomplished...
Emerging UV to blue light emitting scintillation materials promise improved radiation detection capabilities such as dual neutron-gamma detection and higher energy resolution. The use of traditional photomultiplier tubes (PMTs), with their associated high-voltage electronics often represents form factor and power-limiting component. The unique capabilities of a solid-state photomultiplier (SSPM) provides...
To evaluate terahertz emission from intrinsic Josephson junctions, we used a YBa2Cu3O7−δ (YBCO) grain boundary Josephson junction as a terahertz detector. Shapiro steps have been clearly seen on the current-voltage curves of the YBCO junction irradiated with the emission from either a VDI-Tx-S140 transmitter (tens of μW at 620 GHz) or a Bi2Sr2CaCu2O8−x stack (25 μW at 500 GHz). While the harmonic...
Most mammalian cells (e.g., cancer cells and cardiomyocytes) adhere to a culturing surface. Compared to robotic injection of suspended cells (e.g., embryos and oocytes), fewer attempts were made to automate the injection of adherent cells due to their smaller size, highly irregular morphology, small thickness (a few micrometers thick), and large variations in thickness across cells. This paper presents...
We introduce an innovative dual-depth shallow trench isolation (dual STI) scheme for Ultra Thin Body and BOX (UTBB) FDSOI architecture. Since in the dual STI configuration wells are isolated from one another by the deepest trenches, this architecture enables a full use of the back bias while staying compatible with both standard bulk design and conventional SOI substrates. We demonstrate in 20nm ground...
Using the Y-factor measurement method, we estimated the noise figure (NF) of the high temperature superconducting bi-crystal Josephson junction mixer. The experiment was based on small pulse tube refrigerator, working at 60 K. We tested and analysed the dependence of bias voltage and local oscillation signal power with the noise figure.
Advanced junction scaling with device performance gain, leakage reduction and reduced threshold voltage (Vth) variation are critical for CMOS 28nm node and future scaling. In this paper, implant induced defect engineering for higher drive current with reduced SRAM defectivity, advanced junction formation and Vth mismatch (Vtmin) on a state-of-the-art 28nm logic flow are demonstrated and discussed.
In this paper, we have demonstrated that cryogenic implantation applied to source and drain (SD) extension, pocket/halo and SD formation offers advantages for higher core and SRAM driving current and one order lower Ioff bulk (Ioffb) leakage in NMOS with reduced SRAM defectivity. Atomistic Kinetic Monte Carlo (KMC) modeling confirms that the cryo-implantation has enabled a unique control of active...
We demonstrate AlGaN/GaN tunnel junction FETs (TJ-FET) featuring a metal-2DEG Schottky junction at the source. The TJ-FETs exhibit normally-off operation in an otherwise normally-on as-grown sample owing to a current controlling scheme different from the conventional FETs. The high 2DEG density in AlGaN/GaN heterostructure results in a thin tunnel barrier whose effective thickness is controlled by...
Reliability issues including random telegraph noise (RTN) and program disturbance in floating gate (FG) NAND strings for different junction dosages are compared. Although the initial threshold voltage (VT) distributions are similar for various source/drain (S/D) dosages, these samples exhibit different amplitudes on read current fluctuation. This current noise will induce inaccuracy in sensing level...
Gate stack etch profile-induced reliability issues are reviewed and discussed. A taper nitride profile, which blocks source/drain (S/D) implantation, induces an unwanted n- region. In other words, residual charges above the junctions can deplete the n- much easily and cut off the channel formation. This will cause poor string resistance distribution, worse endurance behavior, program and erase (P/E)...
This paper reports recent experimental work on single junction II-VI semiconductor heterostructure solar cells consisting of n-type CdSe and p-type ZnTe grown by molecular beam epitaxy on GaSb substrates. The structural and crystalline properties are characterized using high-resolution X-ray diffraction measurements. The current-voltage measurements reveal expected diode-like rectifying characteristics...
We have demonstrated a robust magnetic tunnel junction (MTJ) with a resistance-area product RA=8 Omega-mum2 that simultaneously satisfies the statistical requirements of high tunneling magnetoresistance TMR > 15sigma(Rp), write threshold spread sigma(Vw)/<Vw> <7.1%, breakdown-to-write voltage margin over 0.5 V, read-induced disturbance rate below 10-9, and sufficient write endurance, and...
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