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In this work, the performance of GaN-based MOS-Channel-HEMTs (MOSC-HEMTs) are shown to be greatly improved by a thin ALD-grown AlN interfacial layer inserted between the amorphous Al2O3 gate dielectric and GaN-channel. The single-crystalline AlN interfacial layer effectively blocks oxygen from the GaN surface and avoids the formation of detrimental Ga-O bonds. Frequency-dispersion in C-V characteristics...
In this article, Gallium nitride (GaN) cantilevers integrated with AlGaN/GaN high electron mobility transistors (HEMTs) are fabricated with a GaN-on-silicon platform, which is fully compatible with the standard HEMTs fabrication process. A type of micro-bending test was used to characterize the piezoresponse of AlGaN/GaN HEMT on the GaN cantilever. The modulation capability of the AlGaN/GaN heterostructures...
The ON-state reliability of enhancement-mode AlGaN/GaN HEMTs fabricated by fluorine plasma implantation technology under gate overdrive is reported. A critical gate forward voltage (VGC) is observed, beyond which the turn-on voltage of the 2DEG channel exhibits a negative shift. This phenomenon is proposed to be caused by the impact ionization of the F ions in the barrier layer by hot electron injection...
GaN “Smart Discrete” power devices were realized using the AlGaN/GaN-on-Si platform, where two built-in intelligent self-protection functions were demonstrated. First, an AlGaN/GaN normally-off high electron mobility transistor (HEMT) with reverse drain blocking capability was realized, featuring a Schottky contact controlled drain barrier. Compared to the Schottky drain structures, the new design...
A high-performance bootstrapped comparator operating with a single-polarity power supply is demonstrated for the development of GaN smart power ICs. The comparator features monolithically integrated enhancement-mode (E-mode) and depletion mode (D-mode) AlGaN/GaN HEMTs. The tail current source uses E-mode HEMT, enabling single-polarity power supply. The input stage could be either E-mode or D-mode...
Owing to superior physical properties such as high electron saturation velocity and high electric breakdown field, GaN-based high electron mobility transistors (HEMTs) are capable of delivering superior performance in microwave amplifiers, high power switches, and high temperature integrated circuits (ICs). Compared to the conventional D-mode HEMTs with negative threshold voltages, enhancement-mode...
Self-protected GaN power devices were realized using AlGaN/GaN-on-Si platform, where two built-in intelligent functions were demonstrated for “Smart Discrete” applications. First, an AlGaN/GaN normally-off high electron mobility transistor (HEMT) with reverse drain blocking capability was realized, featuring a Schottky contact controlled drain barrier. Compared to the Schottky drain structures, the...
The superior performance of Ka-band monolithic-microwave-integrated-circuits (MMIC) power and low-noise amplifiers (LNAs), both fabricated on the same wafer using delta doped AlGaAs-InGaAs-GaAs pseudomorphic high-electron-mobility transistor (PHEMT) technology is discussed. The balanced power amplifier exhibited an output power of 500 mK with 1 2-dB associated gain and a power-added efficiency of...
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