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We present the temperature dependent minority carrier mobility of Ga-content varying InGaAs/InAsSb superlattice infrared detectors by combining time-resolved photoluminescence and electron beam induced current measurements with a new numerical approach to minimize the uncertainty.
We present the temperature-dependent characterization of minority carrier diffusion length, minority carrier lifetime, diffusivity, surface recombination velocity and mobility on In(Ga)As/InAsSb type-II superlattices by using electron beam induced current and time-resolved photoluminescence measurements.
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