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The characteristics of 0.15 mum In0.52Al0.48As/In0.53Ga0.47As pseudomorphic high electron mobility transistors (p-HEMTs) fabricated using the Ne-based atomic layer etching (ALET) technology and the Ar-based conventional reactive ion etching (RIE) technology are reported. Compared to the p-HEMTs fabricated using the Ar-based RIE, the p-HEMTs fabricated using the ALET exhibited improved device performance...
Characteristics of 0.2 mum depletion mode (D) and quasi-enhancement mode (QE) capless InAlAs/InGaAs p-HEMTs having a self-aligned gate (SAG) are reported. The QE SAG capless p-HEMT showed improved output conductance and subthreshold characteristics due to the increased gate-to-channel aspect ratio implemented by using a buried Pt technology. The maximum gm, ION/IOFF, sub-threshold slope, ftau, and...
We investigated 60-nm In0.52Al0.48As/In0.53Ga0.47As pseudomorphic high-electron mobility transistors (p-HEMTs) fabricated by using a Ne-based atomic-layer-etching (ALET) technology. The ALET process produced a reproducible etch rate of 1.47 Aring/cycle for an InP etch stop layer, an excellent InP etch selectivity of 70 against an In0.52Al0.48As barrier layer, and an rms surface-roughness value of...
A Ka-band monolithic microwave integrated circuit (MMIC) oscillator was implemented by using a coplanar waveguide photonic bandgap (PBG) resonator and a 0.1mum GaAs pseudomorphic high electron mobility transistor (p-HEMT). A coplanar labyrinthine one-dimensional PBG resonator was used for reduction in MMIC size. The fabricated MMIC oscillator had an output power of 6.5 dBm at 30.3 GHz and a free-running...
Sub-threshold characteristics of a 0.2 mum self-aligned gate (SAG) capless InAlAs/InGaAs p-HEMT having a highly strained InAs sub-channel were investigated. The extracted ION/IOFF ratio and sub-threshold slope of the SAG capless HEMT (1.27times104 and 78 mV/dec) was better than those of the conventional recessed p-HEMT (5.1times103 and 120 mV/dec), respectively. The capless p-HEMT showed an ION/I...
Electrical and structural properties of low-temperature-grown In/sub 0.53/Ga/sub 0.47/As (LT-InGaAs) on GaAs using an InGaAlAs metamorphic buffer (M-buffer) were studied. Dependence of carrier lifetime of the LT-InGaAs on post thermal annealing was also investigated. Utilization of residual dislocation in the LT-InGaAs on the M-buffer was effective in reducing the carrier lifetime, producing the carrier...
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