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A new SOI LIGBT structure with a combination of uniform and variation in lateral doping profiles on partial membrane (UVLD PM SOI LIGBT) is proposed in this paper. Its silicon substrate under the drift region is selectively etched to remove the charge beneath the buried oxide so that the potential lines can release below the membrane, resulting in an enhanced breakdown voltage. Moreover, combining...
A new SOI high-voltage power device with a combination of Uniform and Variation in Lateral Doping profiles on Partial Membrane(UVLD PM SOI) is proposed. Its partial substrate under the drift region is etched to release the potential lines below the buried layer, combining uniform and variation in lateral doping profiles, resulting in an enhancement of breakdown voltage while achieving a low specific...
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