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A 700 V SA-LIGBT structure for high voltage applications is presented. An important feature is that the device has a good tradeoff among onset voltage, on-resistance and turn-off speed. This is realized mainly by two methods: large extent of P+ diffusion paralleled with N+ diffusion and the introduction of N-buffer layer in the anode. A robust SA-LIGBT is fabricated successfully with a breakdown voltage...
A new Lateral insulated-gate bipolar transistor (LIGBT) structure on SOI substrate, called controlled anode LIGBT (CA-LIGBT), is proposed. The design of the new structure results in high breakdown voltage and good trade off between turn-off time and on-state voltage drop. Simulation results show that the CA-LIGBT has about 85.0% reduction in turn-off time and about 20.0% increase in on-state voltage...
A new structure of SOI-LIGBT operated at thyristor mode with unique self-clamping character (TM-SOI LIGBT) integrated in SPICs has been studied and analyzed. We used 15 mum SOI layer and 3 mum SiO4, respectively to obtain a breakdown voltage exceeding 500 V. Comparison of not only a trade off between forward voltage drop and turn off loss but also a forward biased safe operating area (FBSOA) with...
A new SOI LIGBT structure with a combination of uniform and variation in lateral doping profiles on partial membrane (UVLD PM SOI LIGBT) is proposed in this paper. Its silicon substrate under the drift region is selectively etched to remove the charge beneath the buried oxide so that the potential lines can release below the membrane, resulting in an enhanced breakdown voltage. Moreover, combining...
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