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This study proposes an innovative method to measure the variation of cell leakage current. Extreme cell leakage determines DRAM refresh time (tREF). Although the average leakage current from the test element group (TEG) has been the only index for determining cell leakage, it does not provide the distribution of unit cell leakage. We find that cell leakage distribution can be calculated from the slope...
An analysis on the degradation of DRAM performance caused by the NBTI degradation of p-MOSFET is first to be reported. To improve the NBTI immunity, three candidates are examined. First, minimizing Si-H bonds at Si/SiON interface through controlling the heat-budget at BEOL shows a promising result in NBTI lifetime, but it is not appropriate for DRAM process since it decreases the refresh time. Next,...
In this study we have measured and analyzed characteristics of real transistors on dynamic random access memories (DRAM) including cell transistor by using nano-probing system for improved failure analysis. Measuring results of the conventional pad probing and nano-probing were compared on test element group (TEG) patterns of large transistors. The transistor characteristics of nano-probing results...
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