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Cylindrical resonators are commonly used in Coriolis vibratory gyroscopes, which measure angular velocity through the precession of solid wave. Quality factor and its homogeneity are critical indicators of the resonator characteristics. In this paper, we report that the Q factor varies regularly around the resonator's axis of symmetry. We measured the resonator Q factor by the amplitude frequency...
A thin-film piezoelectric microactuator using a novel combination of active vertical translational scanning and passive resonant rotational scanning is presented. Thin-film lead-zirconate-titanate unimorph bending beams surrounding a central platform provide nearly 200- displacement at 18 V with bandwidth greater than 200 Hz. Inside the platform, a mirror mount, or mirror surface, supported...
The overall objective of BONSAI project (FP6, EC) is the development of ultrasensitive bio-imaging techniques based on novel multifunctional nanoparticles (NPs) with tailored optical and magnetic properties for visualizing complex cellular structures (in tissues and organs), receptors, tumour cells and masses. An important aspect to take into consideration involves the cellular responses to the impact...
High-permittivity (high-k) dielectrics with HfO2/HfxSi1-xOy/Si structures were fabricated using plasma oxidation and subsequent annealing of Hf/SiO2/Si structure. By replacing SiO2 film of initial structure from plasma oxidized SiO2 to thermal oxidized SiO2, the drastic decrease of traps in interfacial layer (IL: HfxSi1-xOy) could be successfully achieved, which shows interface state density of 1??10...
UV laser excited microphotoluminescence (PL) was used to evaluate the local strain for freestanding Si membranes (FSSMs), which can be applied to the fabrication of high performance radiofrequency (RF) power amplifier. The FSSMs were fabricated by the mesa etching of Si on insulator followed by etching of the buried oxide. Compressive strain in the membranes was induced by SiN deposition using low-pressure...
We have demonstrated a RLC matched GaN HEMT power amplifier with 12 dB gain, 0.05-2.0 GHz bandwidth, 8 W CW output power and 36.7-65.4% drain efficiency over the band. The amplifier is packaged in a ceramic S08 package and contains a GaN on SiC device operating at 28 V drain voltage, alongside GaAs integrated passive matching circuitry. A second circuit designed for 48 V operation and 15 W CW power...
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