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Using MeV-range protons to transmute a small fraction of host nuclei into n- or p-type dopants, we have demonstrated a novel method to dope challenging wide bandgap semiconductors. In particular, we have doped isotopically-enriched 13 C diamond and AlGaN films using this method focusing on the 13 C+ 1 H→ 14 N+γ, radiative proton capture resonance at 1.75 MeV and ...
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