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A new Internal Transparent Collector Insulated Gate Bipolar Transistor (ITC-IGBT) is proposed, and 600V ITC-IGBTs with planar gates are fabricated. The structure of the new IGBT is similar to that of PT-IGBT, but a very low carrier lifetime control layer (LCLCL) is introduced in the collector region near the p-collector/ n-buffer junction. The LCLCL is a nano vacancy layer which is induced by high...
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