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The FinFET device shows well Gate control ability on the channel charge beyond the 14nm and sub-14nm node due to superior electrostatic control ability. The Sub Fin Bottom punch through is a major concern for the 14nm and sub-14nm FinFET device. The high dose punch through stop IMP is popularly used to control the Fin Bottom punch through, but it suffered Fin damage and device performance degradation...
The negative-bias-temperature-instability (NBTI) characteristic of PMOS high-k metal-gate (HKMG) bulk FinFETs with different interlayer (IL) fabrication process is investigated in this paper. Compared with chemical oxide IL, both post IL anneal and thermal oxidized IL can improve the device NBTI performance, which is due to the reduction of interface trap states during thermal process. Moreover, post...
As Complementary Metal Oxide Semiconductor (CMOS) Integrated Circuit (IC) technology scales down to 14nm and sub-14nm node according to Moore's Law, Si-bulk FinFET has been demonstrated as one of the most promising device architectures due to higher transistor performance, larger density and lower leakage. However, as the gate length scales down continuously, short channel effect, mainly Vth roll-up/off,...
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