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This paper proposes a novel field-stop insulated gate bipolar transistor with an N-type pillar (NP-IGBT) formed on the silicon backside, which acts as a field-stop layer to pinch off electric field in the n-drift region under forward-blocking mode. TCAD simulation indicates that the proposed IGBT offers an avalanche energy 32% and reverse-biased safe operating area 20% higher than a conventional fieldstop...
Rapid improvement of 4H-SiC material quality and maturation of SiC device processing have enabled the development of high voltage SiC bipolar devices for high voltage switching applications. As one of the major concern of bipolar devices, the onset of dynamic avalanche breakdown and reverse biased safe operating area (RBSOA) of SiC pnp and npn transistors have been systematically analyzed in this...
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